Semiconductor light-emitting device

ABSTRACT

A semiconductor light-emitting device includes: a package substrate having a mounting surface on which a first circuit pattern and a second circuit pattern are disposed; a semiconductor LED chip mounted on the mounting surface, having a first surface which faces the mounting surface and on which a first electrode and a second electrode are disposed, a second surface opposing the first surface, and side surfaces located between the first surface and the second surface, the first electrode and the second electrode being connected to the first circuit pattern and the second circuit pattern, respectively; a wavelength conversion film disposed on the second surface; and a side surface inclined portion disposed on the side surfaces of the semiconductor LED chip, providing inclined surfaces, and including a light-transmitting resin containing a wavelength conversion material.

CROSS-REFERENCE TO THE RELATED APPLICATION

This application claims priority from Korean Patent Application No.10-2015-0022467 filed on Feb. 13, 2015, with the Korean IntellectualProperty Office, the disclosure of which is incorporated herein in itsentirety by reference.

BACKGROUND

Apparatuses and methods consistent with example embodiments relate to asemiconductor light-emitting device.

A semiconductor light-emitting diode (LED) is an element containingsemiconductor materials which, when electrical energy is appliedthereto, emits light through electron-hole recombination due to theapplication of electrical energy. The LED is widely being used as alight source of general lighting devices and a backlight unit oflarge-scale liquid crystal display (LCD) devices, and accordingly, thedevelopment thereof is currently being accelerated.

In general, LEDs may be provided as light-emitting devices packaged in avariety of forms to be easily provided in application devices. In theprocess of packaging such LEDs, disadvantageous effects such asdeteriorations of light emission efficiency or increase in colordeviation may occur in a product due to light loss and total internalreflection caused by other components.

SUMMARY

Example embodiments of the inventive concept provide a semiconductorlight-emitting device having improved light extraction efficiencythrough a significant reduction of light loss due to total internalreflection.

According to an example embodiment, there is provided a semiconductorlight-emitting device which may include: a package substrate having amounting surface on which a first circuit pattern and a second circuitpattern are disposed; a semiconductor LED chip mounted on the mountingsurface, having a first surface which faces the mounting surface and onwhich a first electrode and a second electrode are disposed, a secondsurface opposing the first surface, and side surfaces located betweenthe first surface and the second surface, the first electrode and thesecond electrode being connected to the first circuit pattern and thesecond circuit pattern, respectively; a wavelength conversion filmdisposed on the second surface; and a side surface inclined portiondisposed on the side surfaces of the semiconductor LED chip, providinginclined surfaces, and including a light-transmitting resin containing awavelength conversion material.

The semiconductor light-emitting device may further include alight-transmitting adhesive layer disposed between the wavelengthconversion film and the semiconductor LED chip. In this case, thelight-transmitting adhesive layer may include the samelight-transmitting resin as the light-transmitting resin of the sidesurface inclined portion. The light-transmitting adhesive layer mayinclude the same wavelength conversion material as the wavelengthconversion material of the side surface inclined portion.

The wavelength conversion material of the side surface inclined portionmay contain the same material as the material contained in thewavelength conversion film.

The wavelength conversion film may have an area greater than an area ofthe semiconductor LED chip.

The semiconductor light-emitting device may further include a sidesurface reflection portion which is disposed on the mounting surface ofthe package substrate to surround the side surface inclined portion andincludes the inwardly inclined surfaces by contacting the side surfaceinclined portion. The inwardly inclined surfaces may be used to guidelight emitted from the semiconductor LED chip toward the wavelengthconversion film. In this case, the side surface reflection portion mayinclude a light-transmitting resin in which a reflective powder iscontained. The reflective powder may be a white ceramic powder or ametal powder.

The package substrate may include a cup-shaped reflective structuredisposed on the mounting face to surround the side surface reflectionportion, and the semiconductor light-emitting device may further includean optical lens disposed on the wavelength conversion film.

According to an example embodiment, there is provided a semiconductorlight-emitting device which may include: a package substrate having amounting surface on which a first circuit pattern and a second circuitpattern are disposed; a semiconductor LED chip mounted on the mountingsurface of the package substrate, having a first surface which faces themounting surface and on which a first electrode and a second electrodeare disposed, a second surface opposing the first surface, and sidesurfaces located between the first surface and the second surface, thefirst electrode and the second electrode being connected to the firstcircuit pattern and the second circuit pattern, respectively; awavelength conversion film disposed on the second surface of thesemiconductor LED chip, a side surface inclined portion disposed on theside surfaces of the semiconductor LED chip, providing a surfaceinclined inwardly toward the mounting surface of the package substrate,and composed of a light-transmitting resin containing a light dispersingmaterial; and a side surface reflection portion disposed on the mountingsurface of the package substrate to surround the side surface inclinedportion.

The light dispersing material may contain at least one selected from agroup consisting of SiO₂, Al₂O₃, and TiO₂.

According to an example embodiment, there is provided semiconductorlight-emitting device which may include: a substrate; a semiconductorLED chip mounted on the substrate, having a first surface which facesthe substrate, a second surface opposing the first surface, and sidesurfaces connecting the first surface and the second surface; awavelength conversion film disposed on the second surface of thesemiconductor LED chip; and a side surface structure disposed on theside surfaces of the semiconductor LED chip configured to reflect lightemitted from the semiconductor LED chip toward the wavelength conversionfilm, and comprising a light-transmitting resin containing a wavelengthconversion material or a light dispersing material which is differentfrom the wavelength conversion material.

In a case that the light-transmitting resin contains the lightdispersing material, the light-transmitting resin and the lightdispersing material may have different refractive indexes.

The wavelength conversion film may include a yellow phosphor, and thelight-transmitting resin may include a red phosphor or a green phosphor.

The semiconductor light-emitting device may further include alight-transmitting adhesive layer disposed between the wavelengthconversion film and the semiconductor LED chip. Here, thelight-transmitting adhesive layer and the side surface structure mayinclude a same material.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects, features, and advantages will be moreclearly understood from the following detailed description taken inconjunction with the accompanying drawings, in which:

FIG. 1 is a side cross-sectional view illustrating a semiconductorlight-emitting device according to an example embodiment;

FIG. 2 is a plan view illustrating the semiconductor light-emittingdevice of FIG. 1;

FIG. 3 is side a cross-sectional view illustrating a semiconductor LEDchip employed in the semiconductor light-emitting device of FIG. 1;

FIG. 4 is a cross-sectional view illustrating a semiconductorlight-emitting device according to an example embodiment;

FIG. 5A to FIG. 5D are cross-sectional views illustrating amanufacturing process of the semiconductor light-emitting device;

FIG. 6 is a cross-sectional view illustrating a semiconductorlight-emitting device according to an example embodiment;

FIG. 7 and FIG. 8 are cross-sectional views illustrating variousexamples of a semiconductor LED chip which may be employed in thesemiconductor light-emitting device according to an example embodiment;

FIG. 9A and FIG. 9B are schematic views illustrating examples of a lightsource module using a semiconductor light-emitting device according toan example embodiment;

FIG. 10 is a CIE 1931 chromaticity diagram illustrating a wavelengthconversion material adaptable to a semiconductor light-emitting deviceaccording to an example embodiment;

FIG. 11 is a schematic view illustrating a cross-sectional structure ofa quantum dot (QD) being used as a wavelength conversion material of thesemiconductor light-emitting device according to an example embodiment;

FIG. 12 and FIG. 13 are cross-sectional views illustrating a backlightunit according to various example embodiments;

FIG. 14 is a cross-sectional view illustrating a direct-type backlightunit according to an example embodiment;

FIG. 15 is an exploded perspective view illustrating a display deviceaccording to an example embodiment;

FIG. 16 is an exploded perspective view illustrating a lighting deviceaccording to an example embodiment;

FIG. 17 is an exploded perspective view of a bulb-type lighting deviceaccording to an example embodiment; and

FIG. 18 is an exploded perspective view of a tubular lighting deviceaccording to an example embodiment.

DETAILED DESCRIPTION OF THE EXAMPLE EMBODIMENTS

Example embodiments of the present inventive concept will now bedescribed in detail with reference to the accompanying drawings.

The inventive concept may, however, be exemplified in many differentforms and should not be construed as being limited to the specificembodiments set forth herein. Rather, these embodiments are provided sothat this disclosure will be thorough and complete, and will fullyconvey the scope of the inventive concept to those skilled in the art.In the drawings, the shapes and dimensions of elements may beexaggerated for clarity, and the same reference numerals will be usedthroughout to designate the same or like elements. In this disclosure,terms such as “above”, “upper portion”, “upper surface”, “below”, “lowerportion”, “lower surface”, “lateral surface”, and the like, aredetermined based on the drawings, and in actuality, the terms may bechanged according to a direction in which a device or an element isdisposed.

It will be understood that, although the terms first, second, etc. maybe used herein to describe various elements, these elements should notbe limited by these terms. These terms are used to distinguish oneelement from another. For example, a first element could be termed asecond element, and, similarly, a second element could be termed a firstelement, without departing from the scope of the present inventiveconcept. As used herein, the term “and/or” includes any and allcombinations of one or more of the associated listed items.

It will be understood that when an element is referred to as being“connected” or “coupled” to another element, it can be directlyconnected or coupled to the other element or intervening elements may bepresent. In contrast, when an element is referred to as being “directlyconnected” or “directly coupled” to another element, there are nointervening elements present. It will also be understood that when alayer is referred to as being “on” another layer or substrate, it can bedirectly on the other layer or substrate, or intervening layers may alsobe present.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the inventiveconcept. As used herein, the singular forms “a”, “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises” and/or “comprising,” or “includes” and/or “including” whenused in this specification, specify the presence of stated features,regions, integers, steps, operations, elements, and/or components, butdo not preclude the presence or addition of one or more other features,regions, integers, steps, operations, elements, components, and/orgroups thereof.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this inventive concept belongs. Itwill be further understood that terms, such as those defined in commonlyused dictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art and/orthe present application, and will not be interpreted in an idealized oroverly formal sense unless expressly so defined herein.

The expression “an example embodiment or one example” used in thepresent disclosure does not refer to identical examples and is providedto stress different unique features between each of the examples.However, an example or example embodiment provided in the followingdescription is not excluded from being associated with one or morefeatures of another example or another example embodiment also providedtherein or not provided therein but consistent with the inventiveconcept. For example, even if matters described in a specific exampleare not described in a different example thereto, the matters may beunderstood as being related to the other example, unless otherwisementioned in descriptions thereof.

FIG. 1 is a cross-sectional view illustrating a semiconductorlight-emitting device according to an example embodiment, and FIG. 2 isa plan view illustrating the semiconductor light-emitting device of FIG.1.

Referring to FIG. 1, a semiconductor light-emitting device 30 accordingto an example embodiment of the present disclosure may include a packagesubstrate 10 having a mounting surface, and a semiconductorlight-emitting diode (LED) chip 20 mounted above the mounting surface ofthe package substrate 10.

The package substrate 10 may include first and second circuit patterns12 a and 12 b disposed on the mounting surface. The first and secondcircuit patterns 12 a and 12 b may be extended onto side surfaces oronto the lower surface of the package substrate. The package substrate10 may include an insulating resin, a ceramic substrate, or the like.The first and second circuit patterns 12 a and 12 b may include ametallic component such as Au, Cu, Ag, and Al. For example, the packagesubstrate 10 may be a Printed Circuit Board (PCB), a Metal Core PCB(MCPCB), a Metal PCB (MPCB), a Flexible PCB (FPCB), or the like.

The semiconductor LED chip 20 may have a first surface on which firstand second electrodes 29 a and 29 b are disposed, a second surfaceopposing the first surface, and side surfaces connecting the firstsurface and the second surface. The semiconductor LED chip 20 may bemounted in such a manner that the first surface faces the mountingsurface, and the first and second electrodes 29 a and 29 b may beconnected to the first and second circuit patterns 12 a and 12 b bysolder balls 15 a and 15 b, respectively.

As illustrated in FIG. 3, the semiconductor LED chip 20 employed in theexample embodiment may include a substrate 21, and a firstconductivity-type semiconductor layer 24, an active layer 25, and asecond conductivity-type semiconductor layer 26 sequentially disposed onthe substrate 21. A buffer layer 22 may be disposed between thesubstrate 21 and the first conductivity-type semiconductor layer 24.

The substrate 21 may be an insulating substrate formed of a materialsuch as sapphire, but is not limited thereto. Thus, the substrate 21 mayalso be a conductive substrate or a semiconductor substrate in additionto being an insulating substrate. For example, the substrate 21 may be aSiC substrate, a Si substrate, a MgAl₂O₄ substrate, a MgO substrate, aLiAlO₂ substrate, a LiGaO₂ substrate, or a GaN substrate, in addition tobeing the sapphire substrate. A corrugation (P) may be formed in theupper surface of the substrate 21. The corrugation (P) may improve thequality of grown single crystal while improving light extractionefficiency.

The buffer layer 22 may be an In_(x)Al_(y)Ga_(1−x−y)N layer (0≤x≤1,0≤y≤1). For example, the buffer layer 22 may be one of a GaN layer, anAlN layer, an AlGaN layer, or an InGaN layer. The buffer layer 22 may beused by combining a plurality of layers or progressively modifying thecomposition as needed.

The first conductivity-type semiconductor layer 24 may be a nitridesemiconductor satisfying n-type In_(x)Al_(y)Ga_(1−x−y)N (0≤x<1, 0≤y<1,0≤x+y<1), and an n-type impurity may be Si. For example, the firstconductivity-type semiconductor layer 24 may include an n-type GaN. Thesecond conductivity-type semiconductor layer 26 may be a nitridesemiconductor layer satisfying p-type In_(x)Al_(y)Ga_(1−x−y)N (0≤x<1,0≤y<1, 0≤x+y<1), and p-type impurity may be Mg. For example, althoughthe second conductivity-type semiconductor layer 26 may be implementedas a single-layer structure, as in the example embodiment, the secondconductivity-type semiconductor layer 26 may have a multilayer structurein which layers have different compositions with respect to one another.The active layer 25 may have a multiple quantum well (MQW) structureformed by a quantum well layer and a quantum barrier layer stackedalternately with each other. For example, the quantum well layer and thequantum barrier layer may be In_(x)Al_(y)Ga_(1−x−y)N (0≤x≤1, 0≤y≤1,0≤x+y≤1) layers having different compositions. In certain exampleembodiments, the quantum well layer may be provided as anIn_(x)Ga_(1−x)N (0<x≤1) layer, and the quantum barrier layer may be aGaN layer or an AlGaN layer. The thickness of the quantum well layer andthe quantum barrier layer may each be within a range of 1 nm to 50 nm.The active layer 25 is not limited to a multiple quantum well structure,but may also have a single quantum well structure.

The first and second electrodes 29 a and 29 b may be disposed on a mesaetched region of the first conductivity-type semiconductor layer 24 andthe second conductivity-type semiconductor layer 26, respectively, to belocated on the same surface (the first surface). The first electrode 29a may contain a material such as Ag, Ni, Al, Cr, Rh, Pd, Ir, Ru, Mg, Zn,Pt, and Au, but is not limited to such materials, and may have asingle-layer structure or a structure of two or more layers. The secondelectrode 29 b may be configured of a transparent electrode formed usinga material such as a transparent conductive oxide or a transparentconductive nitride, and may include graphene as necessary. The secondelectrode 29 b may include at least one of Al, Au, Cr, Ni, Ti and Sn.

A wavelength conversion film 38 may be disposed on the upper surface,for example, the second surface, of the semiconductor LED chip 20mounted on the package substrate 10. The wavelength conversion film 38may include a wavelength conversion material converting a portion oflight emitted from the semiconductor LED chip 20 to light having adifferent wavelength. The wavelength conversion film 38 may be providedas a resin layer in which the wavelength conversion material isdispersed, or a ceramic film including a sintered body of a ceramicphosphor. The semiconductor LED chip 20 may emit blue light, and thewavelength conversion film 38 may emit white light by converting aportion of the blue light to yellow and/or red and green light, suchthat the semiconductor light emitting device 30 according to the exampleembodiment may be provided. The wavelength conversion materials that maybe used in the present example embodiment will be described later (seeTable 1 below).

The wavelength conversion film 38 may have an area greater than that ofthe semiconductor LED chip 20. As illustrated in FIG. 2, the wavelengthconversion film 38 may be disposed to cover the second surface of thesemiconductor LED chip 20.

In the example embodiment, a side surface inclined portion 34 may bedisposed on side surfaces of the semiconductor LED chip 20. The sidesurface inclined portion 34 may improve light extraction efficiency byreducing total internal reflection on the side surface of thesemiconductor LED chip 20 by providing an inclined surface to besuitable for light extraction. Such inclined surfaces may be formed toface the package substrate 10. For example, as illustrated in FIG. 1,the width of the side surface inclined portion 34 may become greatertoward the wavelength conversion film 38. The side surface inclinedportion 34 may have an inclination angle of around 45° or less withrespect to the side surface of the semiconductor LED chip 20. However,the inventive concept may not be limited to the above structure of theside surface inclined portion 34. That is, as long as the lightextraction efficiency is improved and light emitted from thesemiconductor LED chip 20 (e.g., light emitted from the side surfaces ofthe semiconductor LED chip 20) can be guided toward the wavelengthconversion film 38, the side surface inclined portion 34 does not needto have inclined side surfaces.

The side surface inclined portion 34 employed in the example embodimentmay include a light-transmitting resin containing a wavelengthconversion material. For example, the light-transmitting resin may be asilicone resin. A refractive index of the silicone resin may be selectedfrom within a range of 1.38 to 1.8. The wavelength conversion materialcontained in the light-transmitting resin of the side surface inclinedportion 34 may include a material identical to the wavelength conversionmaterial contained in the wavelength conversion film 38, but is notlimited thereto. Thus, the wavelength conversion material may also beprovided as a wavelength conversion material for obtaining light havinga different wavelength. For example, the wavelength conversion film 38may include a yellow phosphor, and the side surface inclined portion 34may include at least one of a red phosphor or a green phosphor toenhance color rendering properties (Ra).

As illustrated in FIG. 1 and FIG. 2, a side surface reflection portion36 surrounding the side surface inclined portion 34 may be disposedbelow the wavelength conversion film 38. An interface of the sidesurface inclined portion 34 and the side surface reflection portion 36may serve as a reflective surface, and the inclined surface according tothe example embodiment may provide a structure suitable for guidinglight toward the wavelength conversion film 38. The side surfacereflection portion 36 may include a light-transmitting resin containinga reflective powder. The reflective powder may be a white ceramic powderor a metal powder. For example, the ceramic powder may be a powder of atleast one selected from a group consisting of TiO₂, Al₂O₃, Nb₂O₅, Al₂O₃,and ZnO. The metal powder may be formed of a material such as Al or Ag.

Unlike the present example embodiment, the semiconductor light-emittingdevice 30 may not be provided with the side surface reflection portion36, but may be configured to emit light through the side surfaces of thesemiconductor LED chip 20.

In the example embodiment, a light-transmitting adhesive layer 32 may bedisposed between the wavelength conversion film 38 and the semiconductorLED chip 20 to allow the wavelength conversion film 38 to be bonded tothe second surface of the semiconductor LED chip 20. In this case, thelight-transmitting adhesive layer 32 may include the same material asthe side surface inclined portion 34. For example, thelight-transmitting adhesive layer 32 and the side surface inclinedportion 34 may be formed of the same material, a silicone resincontaining a yellow phosphor. The side surface inclined portion 34 maybe formed of the same material as the light-transmitting adhesive layer32 in the bonding process of the wavelength conversion film 38 and thesemiconductor LED chip 20 using the light-transmitting adhesive layer 32(see FIG. 5C).

In addition to providing an inclined surface suitable for lightextraction, the side surface inclined portion 34 employed in the exampleembodiment may contain a wavelength conversion material such as aphosphor to allow for wavelength conversion of light entering the sidesurface inclined portion 34. Furthermore, light loss due to totalinternal reflection may also be reduced to improve light extractionefficiency.

FIG. 4 is a cross-sectional view illustrating a semiconductorlight-emitting device according to an example embodiment.

Referring to FIG. 4, the semiconductor light-emitting device 40according to the example embodiment may include a package substrate 10having a mounting surface, and a semiconductor LED chip 20 bonded to themounting surface of the package substrate 10 in a flip chip manner,similar to the example embodiments above.

In the example embodiment, a wavelength conversion film 38 may bedisposed to cover the second surface of the semiconductor LED chip 20.The wavelength conversion film 38 may have an area greater than that ofthe semiconductor LED chip 20. A side surface inclined portion 44disposed on side surfaces of the semiconductor LED chip 20 may providean inclined surface suitable for light extraction similar to the sidesurface inclined portion 34 of the previous example embodiment, but mayinclude a light dispersing material 44 a instead of the wavelengthconversion material. In detail, the side surface inclined portion 44 maybe formed of a light-transmitting resin 44 b containing a lightdispersing material 44 a. The light dispersing material 44 a may be aparticle having a different refractive index from the light-transmittingresin 44 b, for example, at least one of SiO₂ (n=1.45), TiO₂ (n=1.48),and Al₂O₃ (n=2.73). The light-transmitting resin 44 b may be formed ofsilicone, an epoxy, or a combination thereof, but is not limitedthereto.

In the example embodiment, a light-transmitting adhesive layer 42 maybond the wavelength conversion film 38 to the second side of thesemiconductor LED chip 20. The light-transmitting adhesive layer 42 maybe formed of a light-transmitting resin identical to thelight-transmitting resin 44 b included in the side surface inclinedportion 44 which contains the light dispersing material 44 a. Forexample, the light-transmitting adhesive layer 42 and the side surfaceinclined portion 44 may be formed of a silicone resin containing silica(SiO₂) powder as the light dispersing material 44 a.

As illustrated in FIG. 4, a side surface reflection portion 46surrounding the side surface of the side surface inclined portion 44 maybe disposed below the wavelength conversion film 38. The side surfacereflection portion 46 may be formed of a light-transmitting resin 46 bcontaining reflective powder 46 a. The reflective powder 46 a may be awhite ceramic powder or a metal powder. The semiconductor light-emittingdevice 40 may further include an optical lens 49 disposed over thewavelength conversion film 38. The optical lens 49 may be formed of aresin material having light transmissive properties, for example,polycarbonate (PC), polymethyl methacrylate (PMMA), an acrylic resin, orthe like, or may also be formed of a glass material.

In addition to providing an inclined surface suitable for lightextraction, the side surface inclined portion 44 employed in the exampleembodiment may contain a light dispersing material to allow scatteringof light entering the side surface inclined portion 44. As a result, areduced color deviation effect may be obtained along with improvedluminous efficiency. Furthermore, an increase in luminous efficiency anda decrease in color deviation may differ somewhat, according to adifference in refractive indexes of the light dispersing material 44 aand the light-transmitting resin 44 b. For example, in the case of agreat difference in the refractive index, color deviation may be furtherdecreased, and in the case of a small difference in the refractiveindex, luminous efficiency may be further increased.

FIG. 5A to FIG. 5D are cross-sectional views illustrating a process ofmanufacturing the semiconductor light-emitting device.

As illustrated in FIG. 5A, the semiconductor LED chip 20 may be mountedabove the package substrate 10.

The semiconductor LED chip 20 may have a flip chip structure in whichthe first surface is mounted to face the mounting surface. Thesemiconductor LED chip 20 may have a first surface on which first andsecond electrodes 29 a and 29 b are disposed, a second surface opposingthe first surface, and side surfaces connecting the first surface andthe second surface, and the package substrate 10 may include first andsecond circuit patterns 12 a and 12 b disposed on the mounting surface.The first and second electrodes 29 a and 29 b may be connected to thefirst and second circuit patterns 12 a and 12 b, respectively, usingsolder balls 15 a and 15 b.

As illustrated in FIG. 5B, a bonding resin 42′ may be disposed on thesecond surface of the semiconductor LED chip 20.

The bonding resin 42′ may be a curable liquid resin 44 b′ mixed with alight dispersing material 44 a in a powder form. At least one of SiO₂,TiO₂, and Al₂O₃ may be used as the light dispersing material 44 a. Thecurable liquid resin 44 b′ may be a resin formed of silicone, epoxy, ora combination thereof, but is not limited thereto. In the bondingprocess, the bonding resin 42′ may be dripped in an amount greater thanthat required for bonding. In detail, a portion of the bonding resin 42′may flow along the side surface of the semiconductor LED chip 20 in asubsequent bonding process to provide an amount of resin sufficient tobe provided as a side surface inclined portion (44 in FIG. 5C). Inaddition, by controlling the viscosity of the bonding resin 42′, theflowing portion thereof may form an inclined surface which may bemaintained on the side surface of the semiconductor LED chip 20 untilcuring for a certain period of time.

FIG. 5C illustrates a state in which the wavelength conversion film 38is bonded to the second surface of the semiconductor LED chip 20 by thelight-transmitting adhesive layer 42 after curing. This state may beobtained by curing the bonding resin 42′. In the process of disposingthe wavelength conversion film 38 on the semiconductor LED chip 20, aportion of the bonding resin 42′ may flow along the side surface of thesemiconductor LED chip 20 in an inclined form, and by curing the bondingresin 42′ so that the inclined shape of the flow may be maintained, theside surface inclined portion 44 may be formed together with thelight-transmitting adhesive layer 42. As a result, the side surfaceinclined portion 44 employed in the example embodiment may be formed ofthe same material as the light-transmitting adhesive layer 42. Accordingto the present process, the side surface inclined portion 44 may improvelight extraction efficiency by reducing total internal reflection on theside surface of the semiconductor LED chip 20 by providing an inclinedsurface suitable for light extraction.

As illustrated in FIG. 5D, a side surface reflection portion 46 may beformed on the package substrate 10 to surround the side surface inclinedportion 44.

The interface of the side surface reflection portion 46 and the sidesurface inclined portion 44 may be provided as a reflective surface forguiding light toward the wavelength conversion film 38. The side surfacereflection portion 46 may be formed of a light-transmitting resincontaining a reflective powder. The reflective powder may be a whiteceramic powder or a metal powder. For example, the ceramic powder may beat least one selected from a group consisting of TiO₂, Al₂O₃, Nb₂O₅,Al₂O₃, and ZnO. The metal powder may be a metal powder such as an Al orAg powder.

Further, an optical lens 49 may be additionally formed as necessary suchthat the semiconductor light-emitting device illustrated in FIG. 4 maybe obtained. The optical lens 49 may be formed by a method of injectinga liquid solvent into a mold and curing it. For example, the opticallens 49 may be formed by a method such as injection molding, transfermolding, or a compression molding.

In the example embodiment, the bonding resin 42 is illustrated ascontaining a light dispersing material 44 a, however, unlike such aconfiguration, the bonding resin may be configured to contain awavelength conversion material such as a phosphor powder to form a sidesurface inclined portion containing a wavelength conversion materialtogether with a light-transmitting adhesive layer.

FIG. 6 is a cross-sectional view illustrating a semiconductorlight-emitting device according to an example embodiment.

A semiconductor light-emitting device 70 illustrated in FIG. 6 mayinclude a package substrate 50 having a mounting surface, and asemiconductor LED chip 60 bonded to the mounting surface of the packagesubstrate 50 in a flip chip manner, similar to the foregoing exampleembodiment.

The package substrate may be a structure in which lead frames of thefirst and second circuit patterns 52 a and 52 b are bonded by aninsulating resin portion 51. The package substrate 50 may be disposed onthe mounting surface, and may further include a reflective structure 56formed to surround the semiconductor LED chip 60. The reflectivestructure 56 may be cup-shaped with an inclined inner surface.

In the example embodiment, a wavelength conversion film 78 may bedisposed to cover the second surface of the semiconductor LED chip 60.The wavelength conversion film 78 may have an area greater than that ofthe semiconductor LED chip 60. A side surface inclined portion 74disposed on a side of the semiconductor LED chip 60 may have an inclinedsurface suitable for light extraction. The side surface inclined portion74 may be formed of a light-transmitting resin containing a wavelengthconversion material, such as the example embodiment illustrated inFIG. 1. Alternatively, the side surface inclined portion 74 may beformed of a light-transmitting resin containing a light dispersingmaterial.

The light-transmitting adhesive layer 72 may bond the wavelengthconversion film 78 to the second surface of the semiconductor LED chip60. The light-transmitting adhesive layer 72 may include alight-transmitting resin containing a wavelength conversion materialidentical to that of the wavelength conversion film 78.

In the example embodiment, the side surface reflection portion 76 may beformed to surround the side surface inclined portion 74 within thereflective structure 56 having a cup shape. The side surface reflectionportion 76 located below the wavelength conversion film 78 may be formedof a light-transmitting resin 76 b containing a reflective powder 76 a.The reflective powder 76 a may be a white ceramic powder or a metalpowder.

In addition to providing an inclined surface suitable for lightextraction, the side surface inclined portion 74 employed in the exampleembodiment may contain a wavelength conversion material such as aphosphor to allow for the scattering of light entering the side surfaceinclined portion 74. As a result, a color deviation reduction effect maybe obtained along with improved light extraction efficiency.

A semiconductor LED chip that may be employed in the example embodimentis not limited to the structure illustrated in FIG. 3, and chips havinga variety of structures capable of being flip-chip bonded may beemployed. FIG. 7 and FIG. 8 are cross-sectional views illustratingvarious examples of the semiconductor LED chip which may be employed inthe semiconductor light-emitting device according to an exampleembodiment.

The semiconductor LED chip 200 illustrated in FIG. 7 may include asubstrate 201, and a first conductivity-type semiconductor layer 204, anactive layer 205, and a second conductivity-type semiconductor layer 206disposed sequentially on the substrate 201. A buffer layer 202 may bedisposed between the substrate 201 and the first conductivity-typesemiconductor layer 204.

The substrate 201 may be an insulating substrate formed of a materialsuch as sapphire but is not limited thereto, and the substrate 201 maybe also be a conductive substrate or a semiconductor substrate inaddition to being an insulating substrate. The buffer layer 202 may bean In_(x)Al_(y)Ga_(1−x−y)N (0≤x≤1, 0≤y≤1) layer. For example, the bufferlayer 202 may be a GaN layer, an AlN layer, an AlGaN layer, or an InGaNlayer. A thickness of the buffer layer 202 may be within a range of 0.1nm to 500 nm. Materials such as ZrB₂, HfB₂, ZrN, HfN, and TiN may beused as necessary. In a detailed example embodiment, the buffer layer202 may be used by combining a plurality of layers, or by progressivelymodifying a composition thereof.

Although the first and second conductivity-type semiconductor layers 204and 206 may be formed of a single layer structure, alternatively, thesemiconductor layers may have a multilayer structure having differentcompositions or thicknesses, and the like, as required. For example, thefirst and second conductivity-type semiconductor layers 204 and 206 maybe provided with a carrier injection layer improving injectionefficiency of electrons and/or holes in at least one layer of the firstand second conductivity-type semiconductor layers 204 and 206. Further,a superlattice structure having various forms may also be providedtherein.

The semiconductor LED chip 200 according to the example embodiment mayfurther include a V-pit generation layer 220 formed on an upper portionof the first conductivity-type semiconductor layer 204. The V-pitgeneration layer 220 may be adjacent to the first conductivity-typesemiconductor layer 204. The V-pit generation layer 220 may have a V-pitdensity of, for example, approximately 1×10⁸ cm⁻² to approximately 5×10⁹cm⁻². According to example embodiments, the V-pit generation layer 220may have a thickness of approximately 200 nm to approximately 800 nm. Inaddition, a width (D) of an inlet of a V-pit 221 may be approximately200 nm to approximately 800 nm.

A V-pit 221 generated in the V-pit generation layer 220 may have an apexangle (θ) of around 10° to 90°, for example, 20° to 80°. In other words,when it is assumed that the V-pit 221 is to be viewed as a cross sectionon a vertical plane passing through a vertex of the V-pit 221, an angleformed by the two inclined surfaces of the V-pit 221, meeting at thevertex, may be between 10° to 90°.

The V-pit 221 generated in the example embodiment may have a growthsurface ((0001) plane) parallel to a substrate surface, and inclinedgrowth surfaces ((1-101) plane) and ((11-22) plane), or other inclinedcrystal surfaces, inclined with respect to the substrate surface. Such aV-pit 221 may be formed around a penetrating potential penetrating alight-emitting structure to prevent a phenomenon of current beingconcentrated on the penetrating potential.

In an example embodiment, the V-pit generation layer 220 may be a GaNlayer or an impurity-doped GaN layer.

A location in which the V-pit 221 is generated in the V-pit generationlayer 220 may be controlled by a growth temperature. For example, in acase in which the growth temperature is relatively low, the generationof the V-pit 221 may be initiated from a lower position. In addition, ina case in which the growth temperature is relatively high, thegeneration of V-pit 221 may be initiated in a higher position. Giventhat the V-pit generation layer 220 is of the same height, in a case inwhich the generation of the V-pit 221 is initiated in a lower position,a width of the upper portion of the V-pit 221 may be further increased.

A film enhancement layer 230 may be provided in the upper portion of theV-pit generation layer 220. The film enhancement layer 230 may have acomposition of M_(x)Ga₁−_(x)N. Here, M may be Al or In, and may satisfy0.01≤x≤0.3. In some example embodiments, the composition may satisfy arange of 0.02≤x≤0.08. In a case in which the value of x is relativelytoo low, the effect of film enhancement may be insufficient. Incontrast, in a case in which the value of x is relatively too high, highluminescence properties may be decreased. The value of x within the filmenhancement layer 230 may be constant. Optionally, the film enhancementlayer 230 may have a multilayer structure in which the GaN layer and theMxGa1-xN layers (wherein M is Al or In, and x satisfies 0.01≤x≤0.3) arelayered alternately. Moreover, the film enhancement layer 230 may be asuperlattice layer of GaN and MxGa1-xN (wherein M is Al or In, and xsatisfies 0.01≤x≤0.3). A thickness of the film enhancement layer 230 maybe approximately 20 nm to approximately 100 nm.

The film enhancement layer 230 may be formed on the entire upper surfaceof the V-pit generation layer 220. In addition, the film enhancementlayer 230 may have a substantially constant thickness in a verticaldirection with respect to the upper surface of the V-pit generationlayer 220.

The film enhancement layer 230 may fill the V-pit 221 at least partiallyby covering the inside of the V-pit 221 of the V-pit generation layer220 to a predetermined thickness. A V-pit 231 of the film enhancementlayer 230 may be recessed into the V-pit 221 of the V-pit generationlayer 220. The thickness of the film enhancement layer 230 in a verticaldirection with respect to the surface of the upper portion of the V-pitgeneration layer 220 may be approximately 5% to approximately 20% of thethickness of the V-pit generation layer 220.

The V-pit 231 formed in the film enhancement layer 230 may have adimension identical or similar to that of the V-pit 221 of the V-pitgeneration layer 220.

In addition, an upper surface 233 of the film enhancement layer 230 mayhave enhanced surface roughness compared to an upper surface 223 of theV-pit generation layer 220. For example, the surface roughness of theupper surface 233 of the film enhancement layer 230 may be 60% or lessof the surface roughness of the upper surface 223 of the V-pitgeneration layer 220. Such surface roughness may be measured with anatomic force microscope (AFM). In addition, the surface roughness may bebased on measurement of an upper surface excluding the V-pits 221 and231. In addition, the surface roughness may be determined by measuringthe uniformity (flatness) of an interface. For example, the uniformityof the film enhancement layer 230 and an interface adjacent thereto maybe superior to the uniformity of the V-pit generation layer 220 and aninterface adjacent thereto.

Therefore, by enhancing the surface roughness of the upper surface 233of the film enhancement layer 230, the surface roughness of a barrierlayer and a quantum well layer within the active layer 205 disposedthereabove may both be enhanced. As a result, luminescence may besignificantly improved since non-light-emitting recombination ofelectrons and holes may be reduced.

The semiconductor LED chip 200 may further include a superlattice layer240 adjacent to the active layer 205 above the first conductivity-typesemiconductor layer 204. The superlattice layer 240 may have a structurein which a plurality of In_(x)Al_(y)Ga_((1−xy))N layers (here, 0≤x<1,0≤y<1, 0≤x+y<1) having different compositions or impurity contents withrespect to each other are stacked repeatedly, or an insulating materiallayer is partially formed therein. The superlattice layer 240 mayfacilitate uniform luminescence across a large area by promoting currentdiffusion.

A V-pit 241 corresponding to the V-pit 231 formed in the filmenhancement layer 230 may also be formed in the superlattice layer 240.

The superlattice layer 240 may fill the V-pit 231 at least partially bycovering the inside of the V-pit 231 of the film enhancement layer 230to a predetermined thickness. The V-pit 241 of the superlattice layer240 may be recessed into the V-pit 231 of the film enhancement layer230.

A V-pit 251 corresponding to the V-pit 241 formed in the superlatticelayer 240 may also be formed in the active layer 250.

Like the superlattice layer 240, the active layer 250 may fill the V-pit241 at least partially by covering the inside of the V-pit 241 of thesuperlattice layer 240 to a predetermined thickness. The V-pit 251 ofthe active layer 250 may be recessed into the V-pit 241 of thesuperlattice layer 240.

The second conductivity-type semiconductor layer 206 may further includean electron blocking layer disposed to be adjacent to the active layer205. The electron blocking layer (EBL) may have a structure in which aplurality of In_(x)Al_(y)Ga_((1−xy))N layers having differentcompositions with respect to each other are layered, or one or morelayers including Al_(y)Ga_((1−y))N. The electron blocking layer having aband gap wider than that of the active layer 205 may prevent electronsfrom moving to the second conductivity-type(p-type) semiconductor layer206.

A valley of the V-shape of a V-pit formed in the V-pit generation layer220, the film enhancement layer 230, the superlattice layer 240, or theactive layer 250 may become gentle gradually in the thickness directionof each layer, for example, the closer to the second conductivity-typesemiconductor layer 206, the more flattened the V-pit may become by theactive layer 250 or the second conductivity-type semiconductor layer206.

The semiconductor LED chip 200 may include a first electrode 219 adisposed on the first conductivity-type semiconductor layer 204, and anohmic contact layer 218 and a second electrode 219 b disposedsequentially on the second conductivity-type semiconductor layer 206.

FIG. 8 is a side cross-sectional view illustrating an example of asemiconductor LED chip which may be employed in the present inventiveconcept.

Referring to FIG. 8, a semiconductor LED chip 400 may include asemiconductor laminate S formed on a substrate 401. The semiconductorlaminate S may include a first conductivity-type semiconductor layer414, an active layer 415, and a second conductivity-type semiconductorlayer 416.

The semiconductor LED chip 400 may include first and second electrodes422 and 424 connected to the first and second conductivity-typesemiconductor layers 414 and 416, respectively. The first electrode 422may include a connecting electrode portion 422 a penetrating through thesecond conductivity-type semiconductor layer 416 and the active layer415 so as to be connected to the first conductivity-type semiconductorlayer 414, similar to the conductive via, and a first electrode pad 422b connected to the connecting electrode portion 422 a. The connectingelectrode portion 422 a may be surrounded by an insulating portion 421to be electrically isolated from the active layer 415 and the secondconductivity-type semiconductor layer 416. The connecting electrodeportion 422 a may be disposed on a region in which the semiconductorlaminate (S) is etched. The number, a shape, a pitch, a contact areawith the first conductivity-type semiconductor layer 414, and the like,of the connecting electrode portion 422 a may be appropriately designedto lower contact resistance. In addition, the connecting electrodeportion 422 a may improve current flow by being arranged to form rowsand columns on the semiconductor laminate 410. The second electrode 424may include an ohmic contact layer 424 a on the second conductivity-typesemiconductor layer 416 and a second electrode pad 424 b.

The connecting electrode portion 422 a and the ohmic contact layer 424 amay have a conductive material having ohmic contact with first andsecond conductivity type semiconductor layers 414 and 416, respectively,and may have a single layer or multilayer structure thereof. Forexample, the connecting electrode portion 422 a and the ohmic contactlayer 424 a may be formed by depositing or sputtering one or morematerials, such as Ag, Al, Ni, Cr, a transparent conductive oxide (TCO),and the like.

The first and second electrode pads 422 b and 424 b may be respectivelyconnected to the connecting electrode portion 422 a and the ohmiccontact layer 424 a to serve as external terminals of the semiconductorlight-emitting diode 400. For example, the first and second electrodepads 422 b and 424 b may be Au, Ag, Al, Ti, W, Cu, Sn, Ni, Pt, Cr, NiSn,TiW, AuSn, or a eutectic metal of such elements.

The first and second electrodes 422 and 424 may be arranged in the samedirection as each other, and may be mounted in the form of a flip chipon a lead frame and the like.

The two electrodes 422 and 424 may be electrically isolated from eachother by the insulating portion 421. Although as a material of theinsulating portion 421, any material having electrically insulatingproperties may be used, and any object having electrically insulatingproperties may be employed, a material having relatively low lightabsorption may be used. For example, a silicon oxide and silicon nitridesuch as SiO₂, SiO_(x)N_(y), and Si_(x)N_(y) may be used. A lightreflecting structure may be formed as necessary by dispersing alight-reflective filler in a light-transmitting material. Unlike that,the insulating unit 421 may have a multilayer reflective structure inwhich a plurality of insulating films having different refractiveindices with respect to each other are alternately stacked. For example,such a multilayer structure may be provided as a distributed Braggreflector (DBR) in which a first insulating film having a firstrefractive index and a second insulating film having a second refractiveindex are alternately stacked.

The multilayer reflective structure may be a structure in which aplurality of insulating films having different refractive indices withrespect to one another are stacked repeatedly two to one hundred times.For example, the insulating films may be stacked repeatedly three toseventy times, and in detail, four to fifty times. The plurality ofinsulating films of the multilayer reflective structure may,respectively, be an oxide or a nitride such as SiO₂, SiN, SiO_(x)N_(y),TiO₂, Si₃N₄, Al₂O₃, TiN, AlN, ZrO₂, TiAlN, TiSiN, and combinationsthereof. For example, given that λ is a wavelength of light generated inthe active layer and n is a refractive index of a corresponding layer,the first insulating film and the second insulating film may be formedto have a thickness of λ/4n, and may have a thickness of approximately300 Å to 900 Å. In this case, the multilayer reflective structure may bedesigned so that a refractive index and a thickness of the firstinsulating film and the second insulating layer are respectivelyselected to have a relatively high degree of reflectivity (for example,95% or more) with respect to the wavelength of light generated in theactive layer 415.

The refractive indices of the first insulating film and the secondinsulating film may be determined to be values within a range ofapproximately 1.4 to 2.5, and may be values smaller than the refractiveindex of the first conductivity-type semiconductor layer 404 and therefractive index of the substrate, but may be a value smaller than therefractive index of the first conductivity-type semiconductor layer 404and greater than the refractive index of the substrate.

FIG. 9A and FIG. 9B are schematic views illustrating various examples ofa light source module using the semiconductor light-emitting deviceaccording to the example embodiment.

The light source modules illustrated in FIG. 9A and FIG. 9B may includea plurality of light-emitting devices mounted on a circuit boardrespectively, and the plurality of light-emitting devices may be thesemiconductor light-emitting device according to the above-describedexample embodiment. The plurality of light-emitting devices mounted in asingle light source module may be configured as a single package,generating light of the same wavelength, but as in the exampleembodiment, the devices may be configured as packages of different typesgenerating light of different wavelengths.

Referring to FIG. 9A, a white light source module may be configured bycombining white light-emitting devices 30 and 40 having respective colortemperatures of 3000 K and 4000 K, and a red light-emitting device. Thewhite light source module may be adjusted to have a color temperaturewithin a range of 3000 K to 4000 K, and may provide white light within arange of 85 to 100 color rendering property (Ra).

In another example embodiment, the white light source module may only beconfigured of a white light-emitting device, but a portion of thepackage thereof may produce white light of different color temperatures.For example, as illustrated in FIG. 9B, by combining a whitelight-emitting device 27 having a color temperature of 2700 K and awhite light-emitting device 50 having a color temperature of 5000 K, thecolor temperature may be adjusted within a range of 2700 K to 5000 K,and white light having a color rendering property (Ra) within a range of85 to 99 may be provided. Here, the number of light-emitting devices ofeach color temperature may be changed, mainly depending on a value ofbasic color temperature settings. For example, in a case in which adefault color temperature value of a lighting device is within avicinity of 4000 K, the number of light-emitting devices correspondingto 4000 K may be greater than the number of light-emitting devicescorresponding to 3000 K or red light-emitting devices.

In this manner, different kinds of light-emitting devices may beconfigured to include at least one of purple, blue, green, red, orinfrared LEDs, and a light source emitting white light by combiningyellow, green, red, or orange phosphors with blue LEDs, such that thecolor temperature and color rendering index (CRI) of white light may beadjusted.

The above-described white light source module may be used as a lightingdevice, for example, the lighting device of FIG. 16 to FIG. 18.

In the semiconductor light-emitting device according to the exampleembodiment, light having a required color may be determined depending ona wavelength of the LED chip, and the type and blending ratio of aphosphor, and in the case of white light, a color temperature and colorrendering index may be controlled. Thereby, the wavelength conversionfilm used in this example embodiment may be produced.

For example, when the LED chip emits blue light, a light-emitting deviceincluding at least one of yellow, green, and red phosphors may beconfigured to emit white light having a variety of color temperaturesdepending on the blending ratio of phosphors. In a different mannertherefrom, an LED element package in which a green or red phosphor isapplied to a blue LED chip may be configured to emit green or red light.In this way, the color temperature and color rendering index of whitelight may be adjusted by combining an LED element package emitting whitelight and a package emitting green or red light. Further, at least oneof light-emitting diodes emitting purple, blue, green, red, or infraredlight may be configured to be included in the lighting device.

In this case, the lighting device may adjust the color rendering indexto a daylight level from a level of sodium (Na) light, and may generatea variety of white light having a color temperature level of 20000 Kincreased from 1500 K, and may adjust the color of lighting as necessaryaccording to the surrounding atmosphere or the mood by generatingviolet, blue, green, red, and orange visible light or infrared light.Furthermore, light of a specific wavelength promoting plant growth mayalso be generated.

White light created by combining yellow, green, and red phosphors and/orgreen and red light-emitting elements with blue light-emitting diodesmay have two or more peak wavelengths, and, as illustrated in FIG. 10,the (x, y) coordinates of a CIE 1931 chromaticity diagram may be locatedwithin a line segment area connecting (0.4476, 0.4074), (0.3484,0.3516), (0.3101, 0.3162), (0.3128, 0.3292), and (0.3333, 0.3333), or inan area surrounded by a line segment and a black body radiationspectrum. The color temperature of white light may be between 1500 K and20000 K.

A variety of materials, such as a phosphor and/or a quantum dot may beused as a wavelength conversion material for converting a wavelength oflight emitted from the semiconductor light-emitting diode.

Phosphors may have the following formula and colors.

Oxides: yellow and green Y₃Al₅O₁₂:Ce, Tb₃Al₅O₁₂:Ce, Lu₃Al₅O₁₂:Ce

Silicates: Yellow and Green (Ba, Sr)₂SiO₄:Eu, yellow and orange (Ba,Sr)₃SiO₅:Ce

Nitrides: green β-SiAlON: Eu, yellow La₃Si₆N₁₁:Ce, orange α-SiAlON:Eu,red CaAlSiN₃:Eu, Sr₂Si₅N₈: Eu, SrSiAl₄N₇:Eu, SrLiAl₃N₄:Eu, Ln_(4−x)(Eu_(z)M_(1−z))_(x)Si_(12−y)Al_(y)O_(3+x+y)N_(18−xy) (0.5≤x≤3, 0<z<0.3,0<y≤4)—formula (1)

However, Ln in formula (1) may be at least one type of element selectedfrom a group consisting of group IIIa elements and rare earth elements,and M may be at least one type of element selected from a groupconsisting of Ca, Ba, Sr, and Mg.

Fluorides: KSF-based Red K₂SiF₆:Mn₄ ⁺, K₂TiF₆:Mn₄ ⁺, NaYF₄:Mn₄ ⁺,NaGdF₄:Mn₄ ⁺

The composition of phosphor may basically coincide with stoichiometry,and respective elements may be substituted with other elements withinthe respective groups of elements in the periodic table. For example, Srmay be substituted with Ba, Ca, Mg, or the like of an alkaline earthgroup II element, and Y may be substituted with Tb, Lu, Sc, Gd, or thelike of lanthanides. In addition, an activator Eu and the like may besubstituted with Ce, Tb, Pr, Er, Yb, and the like, depending on therequired energy level, and co-activators and the like may beadditionally applied solely to the activator or for a property change.

In detail, individual fluoride-based red phosphors may be coated with afluoride which does not contain Mn, or may further include an organiccoating on a surface of the phosphor or on a fluoride coated surfacewhich does not contain Mn to improve dependability in hightemperature/high humidity environments. Since the fluoride-based redphosphor such as the above may implement a narrow full width at halfmaximum of 40 nm or less, unlike other phosphors, the phosphor may beused in high-definition televisions such as UHD TVs.

The following Table 1 shows the types of phosphors according to fieldsof application of white light-emitting elements using blue LED chips(440 nm to 460 nm) or UV LED chips (380 nm to 440 nm).

TABLE 1 Use Phosphors LED TV BLU β-SiAlON:Eu2+ (Ca, Sr)AlSiN₃:Eu₂+La₃Si₆N₁₁:Ce3+ K₂SiF₆:Mn4+ SrLiAl3N4:EuLn_(4−x)(Eu_(z)M_(1−zx)Si_(12−y)Al_(y)O_(3+x+y)N_(18−xy) (0.5 ≤ x ≤ 3, 0< z < 0.3, 0 < y ≤ 4) K₂TiF₆:Mn₄ ⁺ NaYF₄:Mn₄ ⁺ NaGdF₄:Mn₄ ⁺ LightingLu₃Al₅O₁₂:Ce3+ Ca-α-SiAlON:Eu2+ La₃Si₆N₁₁:Ce3+ (Ca, Sr)AlSiN₃:Eu₂+Y₃Al₅O₁₂:Ce3+ K₂SiF₆:Mn4+ SrLiAl3N4:EuLn_(4−x)(Eu_(z)M_(1−zx)Si_(12−y)Al_(y)O_(3+x+y)N_(18−xy) (0.5 ≤ x ≤ 3, 0< z < 0.3, 0 < y ≤ 4) K₂TiF₆:Mn₄ ⁺ NaYF₄:Mn₄ ⁺ NaGdF₄:Mn₄ ⁺ Side ViewLu₃Al₅O₁₂:Ce3+ (Mobile, Note Ca-α-SiAlON:Eu2+ PC) La₃Si₆N₁₁:Ce3+ (Ca,Sr)AlSiN₃:Eu₂+ Y₃Al₅O₁₂:Ce3+ (Sr, Ba, Ca, Mg)2SiO4:Eu2+ K₂SiF₆:Mn4+SrLiAl3N4:Eu Ln_(4−x)(Eu_(z)M_(1−zx)Si_(12−y)Al_(y)O_(3+x+y)N_(18−xy)(0.5 ≤ x ≤ 3, 0 < z < 0.3, 0 < y ≤ 4) K₂TiF₆:Mn₄ ⁺ NaYF₄:Mn₄ ⁺NaGdF₄:Mn₄ ⁺ Electrical Devices Lu₃Al₅O₁₂:Ce3+ (Head Lamp, etc.)Ca-α-SiAlON:Eu2+ La₃Si₆N₁₁:Ce3+ (Ca, Sr)AlSiN₃:Eu₂+ Y₃Al₅O₁₂:Ce3+K₂SiF₆:Mn4+ SrLiAl3N4:EuLn_(4−x)(Eu_(z)M_(1−zx)Si_(12−y)Al_(y)O_(3+x+y)N_(18−xy) (0.5 ≤ x ≤ 3, 0< z < 0.3, 0 < y ≤ 4) K₂TiF₆:Mn₄ ⁺ NaYF₄:Mn₄ ⁺ NaGdF₄:Mn₄ ⁺

Further, a wavelength conversion portion may be formed using awavelength conversion material such as a quantum dot (QD) bysubstituting a phosphor therewith or by combining the QD with thephosphor.

FIG. 11 is a schematic view illustrating a cross sectional structure ofa quantum dot (QD) used as a wavelength conversion material according toan example embodiment. The quantum dot (QD) may have a core-shellstructure using group III-V or group II-VI compound semiconductors. Forexample, the quantum dot may have a core formed of a material such asCdSe, InP, or the like and a shell formed of a material such as ZnS, orZnSe. In addition, the quantum dots may include a ligand for thestabilization of the core and the shell. For example, a diameter of thecore may be between 1 nm to 30 nm, or in detail, between 3 nm to 10 nm,and a thickness of the shell may be between 0.1 nm to 20 nm, or indetail, between 0.5 nm to 2 nm.

The quantum dot may implement various colors depending on the size; indetail, in a case in which the quantum dots are used as a substitutematerial for a phosphor, the quantum dots may be used as red or greenphosphors. In a case in which the quantum dots are used, a narrow fullwidth at half maximum of approximately 35 nm may be implemented.

The wavelength conversion material may be prepared in advance as thewavelength conversion film described in the previous example embodiment,and may be used by adhering to the surface of an optical structure suchas an LED chip. In this case, the wavelength conversion material may bereadily applicable in a structure of a uniform thickness on a requiredregion.

FIG. 12 and FIG. 13 are cross-sectional views illustrating a backlightunit according to various example embodiments.

Referring to FIG. 12, a backlight unit 2000 may include a light guideplate 2040 and light source modules 2010 provided on both sides of thelight guide plate 2040. Further, the backlight unit 2000 may furtherinclude a reflective plate 2020 disposed on the lower portion of thelight guide plate 2040. The backlight unit 2000 in the exampleembodiment may be an edge type backlight unit.

According to an example embodiment, the light source module 2010 mayonly be provided on one side of the light guide plate 2040, or may beadditionally provided on the other side thereof. The light source module2010 may include a printed circuit board 2001 and a plurality of lightsources 2005 mounted on a top surface of the printed circuit board 2001.The light source 2005 used in this case may be a semiconductorlight-emitting device according to the previously described exampleembodiment.

Referring to FIG. 13, a backlight unit 2100 may include a lightdiffusing plate 2140 and a light source module 2110 arranged on thelower portion of the light diffusion plate 2140. Further, the backlightunit 2100 may be arranged on the lower portion of the light diffusingplate 2140, and may further include a bottom case 2160 for accommodatingthe light source module 2110 therein. The backlight unit 2100 in theexample embodiment may be a direct type backlight unit.

The light source module 2110 may include a printed circuit board 2101and a plurality of light sources 2105 mounted on a top surface of theprinted circuit board 2101. The light source 2015 used in this case maybe a semiconductor light-emitting device according to the previouslydescribed example embodiment.

FIG. 14 is a cross-sectional view illustrating a direct type backlightunit according to an example embodiment.

Referring to FIG. 14, a backlight unit 2400 may include a light source2405 mounted on a circuit board 2401, and one or more optical sheets2406 disposed on the upper portion of the light source 2405.

The light source 2405 may be provided as a white light-emitting devicecontaining a red phosphor according to an example embodiment, and thelight source 2405 used in this case may be provided as the semiconductorlight-emitting device according to the previously described exampleembodiment.

The circuit board 2401 employed in the example embodiment may have afirst flat surface portion 2401 a corresponding to a main area, aninclined portion 2401 b disposed around the main area, in which at leasta portion thereof may be inclined, and a second flat surface portion2401 c disposed on an edge of the circuit board 2401 which is anexternal side of the inclined portion 2401 b. On the first flat surfaceportion 2401 a, the light sources 2405 may be arranged to have a firstinterval D2 therebetween, and on the inclined portion 2401 b, at leastone or more light sources 2405 may also be arranged to have a secondinterval D1 therebetween. The first interval d1 may be identical to thesecond interval d2. A width (or a length thereof in cross-section) ofthe inclined portion 2401 b may be shorter than a width of the firstflat surface portion 2401 a, and may be formed to be longer than a widthof the second flat surface portion 2401 c. In addition, at least onelight source 2405 may be arranged as necessary on the second flatsurface portion 2401 c.

A gradient of the inclined portion 2401 b may be adequately adjustablewithin a range of being greater than 0° and less than 90°, based on thefirst flat surface portion 2401 a. By taking such a structure, thecircuit board 2401 may maintain a uniform degree of brightness even inthe vicinity of the edge of the optical sheet 2406.

FIG. 15 is an exploded perspective view illustrating a display deviceaccording to an example embodiment.

Referring to FIG. 15, a display device 3000 may include a backlight unit3100, an optical sheet 3200, and an image display panel 3300 such as aliquid crystal panel.

The backlight unit 3100 may include a bottom case 3110, a reflector3120, a light guide plate 3140, and a light source module 3130 providedon at least one side of the light guide plate 3140. The light sourcemodule 3130 may include a printed circuit board 3131 and a light source3132. The light source 3132 used in this case may be provided as thesemiconductor light-emitting device according to the previouslydescribed example embodiment.

The optical sheet 3200 may be disposed between the light guide plate3140 and the image display panel 3300, and may include various types ofsheets such as a diffusion sheet, a prism sheet, or a protective sheet.

The image display panel 3300 may display an image using light emittedfrom the optical sheet 3200. The image display panel 3300 may include anarray substrate 3320, a liquid crystal layer 3330, and a color filtersubstrate 3340. The array substrate 3320 may include pixel electrodesarranged in a matrix form, thin-film transistors applying a drivingvoltage to the pixel electrodes, and signal lines for operating thethin-film transistors. The color filter substrate 3340 may include atransparent substrate, a color filter, and a common electrode. The colorfilter may include filters for selectively passing white light of aparticular wavelength in white light emitted from the backlight unit3100. The liquid crystal layer 3330 may control light transmittance bybeing rearranged by an electrical field formed between the pixelelectrodes and the common electrode. The light transmittance-adjustedlight may be passed through the color filter of the color filtersubstrate 3340 to display an image. The image display panel 3300 mayfurther include a driving circuit unit for processing video signals andthe like.

According to the display device 3000 in the example embodiment, sincethe display device 3000 employs a light source 3132 that emits bluelight, green light, and red light having a relatively small full widthat half maximum therein, the emitted light may implement blue, green,and red colors having high levels of color purity after passing throughthe color filter substrate 3340.

FIG. 16 is a perspective view illustrating a lighting device accordingto an example embodiment.

Referring to FIG. 16, a planar lighting device 4100 may include a lightsource module 4110, a power supply device 4120, and a housing 4030.According to the example embodiment, the light source module 4110 mayinclude a light source array, and the light source 2015 used in thiscase may be a semiconductor light-emitting device according to thepreviously described example embodiment. The power supply device 4120may include a light-emitting diode driving unit.

The light source module 4110 may include a light source array, and maybe formed to have an overall planar shape. According to the exampleembodiment, the light source module 4110 may include a light-emittingdiode and a controller storing driving information of the light-emittingdiode.

The power supply device 4120 may be configured to supply power to thelight source module 4110. A receiving space to allow the light sourcemodule 4110 and the power supply device 4120 to be received therein maybe formed in the housing 4130, and the housing 4130 may be formed in ahexahedral shape with an open side, but is not limited thereto. Thelight source module 4110 may be disposed to emit light through the openone side of the housing 4130.

FIG. 17 is an exploded perspective view of a bulb-type lighting deviceaccording to an example embodiment.

A lighting device 4200 illustrated in FIG. 17 may include a socket 4210,a power unit 4220, a heat-radiating unit 4230, a light source module4240, and an optical unit 4250. According to an illustrative exampleembodiment, the light source module 4240 may include a light-emittingdiode array, and the power unit 4220 may include a light-emitting diodedriving unit.

The socket 4210 may be configured to be replaced with an existinglighting device. Power supplied to the lighting device 4200 may beapplied through the socket 4210. As illustrated, the power unit 4220 maybe divided into a first power unit 4221 and a second power unit 4222 andmay be assembled. The heat-radiating unit 4230 may include an internalheat-radiating unit 4231 and an external heat-radiating unit 4232. Theinternal heat-radiating unit 4231 may be connected directly to the lightsource module 4240 and/or the power unit 4220, through which heat may betransferred to the external heat-radiating unit 4232. The opticalportion 4250 may include an internal optical unit (not illustrated) andan external optical unit (not illustrated), and may be configured toevenly distribute light emitted from the light source module 4240.

The light source module 4240 may receive power from the power sourceunit 4220 and emit light to the optical unit 4250. The light sourcemodule 4240 may include one or more light sources 4241, a circuit board4242, and a controller 4243, and the controller 4243 may store drivinginformation of light-emitting diodes 4241. The light source 4241 used inthis case may be a semiconductor light-emitting device according to thepreviously described example embodiment.

The lighting device 4300 according to the example embodiment may includea reflecting plate 4310 above the light source module 4240, and thereflecting plate 4310 may reduce glare by allowing light from the lightsource to be dispersed evenly to the side and rear.

A communications module 4320 may be mounted on the upper portion of thereflecting plate 4310, through which home-network communications may beimplemented. For example, the communications module 4320 may be awireless communications module using ZigBee®, Wi-Fi, or Li-Fi and maycontrol lights installed in and around the home, such as turning alighting device on/off or adjusting brightness, via a smartphone or awireless controller. In addition, with the use of a Li-Fi communicationsmodule with a visible light wavelength of lighting devices installed inand around the home, electronics and automotive systems in and aroundthe home such as TVs, refrigerators, air conditioners, door locks, andautomobiles may be controlled.

The reflecting plate 4310 and the communications module 4320 may becovered by a cover unit 4330.

FIG. 18 is an exploded perspective view of a tubular lighting deviceaccording to an example embodiment.

A lighting device 4400 illustrated in FIG. 18 may include aheat-radiating member 4410, a cover 4441, a light source module 4450, afirst socket 4460, and a second socket 4470. A plurality ofheat-radiating fins 4420 and 4431 on the inner and/or outer surfaces ofthe heat-radiating member 4410 in a corrugated form, and theheat-radiating fins 4420 and 4431, may be designed to have variousshapes and spacings. A support portion 4432 may be formed in aprotruding form on an inner side of the heat-radiating member 4410. Thelight source module 4450 may be fixed to the supporting portion 4432.Locking projections 4433 may be formed on both sides of the radiatingmember 4410.

Locking grooves 4442 may be formed in the cover 4441, and the lockingprojections 4433 of the heat-radiating member 4410 may be coupled to thelocking grooves 4442 in a hook coupling structure. Locations in whichthe locking grooves 4442 and the locking projections 4433 are formed maybe interchangeable with each other.

The light source module 4450 may include a light source array. The lightsource module 4450 may include a printed circuit board 4451, a lightsource 4452, and a controller 4453. The light source 4452 used in thiscase may be a semiconductor light-emitting device according to thepreviously described example embodiment. As described above, thecontroller 4453 may store driving information of the light source 4452.Circuit wiring for operating the light source 4452 may be formed in theprinted circuit board 4451. In addition, the light source module 4450may include configuration elements for operating the light source 4452.

The first and second sockets 4460 and 4470 as a pair of sockets may havea structure of being coupled to both ends of a cylindrical cover unitconfigured of the heat-radiating member 4410 and the cover 4441. Forexample, the first socket 4460 may include an electrode terminal 4461and a power device 4462, and a dummy terminal 4471 may be disposed onthe second socket 4470. In addition, an optical sensor and/or acommunications module may be provided in either of the first socket 4460or the second socket 4470. For example, an optical sensor and/or acommunications module may be provided in the second socket 4470 in whichthe dummy terminal 4471 is provided. As another example, an opticalsensor and/or a communications module may be provided in the firstsocket 4460 in which the electrode terminal 4461 is disposed.

As set forth above, according to various example embodiments,re-incident light in the semiconductor LED chip may be reduced todecrease light loss due to total internal reflection by disposing a sidesurface inclined portion on the side of the semiconductor LED chip toform an inclined surface on the side surface of the semiconductor LEDchip. Furthermore, light extraction efficiency may be additionallyincreased by including a wavelength conversion material or lightdispersing material to the side surface inclined portion, and in detail,color deviation may be improved.

While example embodiments have been shown and described above, it willbe apparent to those skilled in the art that modifications andvariations could be made without departing from the scope of theinventive concept as defined by the appended claims.

What is claimed is:
 1. A semiconductor light-emitting device comprising:a package substrate having a mounting surface on which a first circuitpattern and a second circuit pattern are disposed; a semiconductorlight-emitting diode (LED) chip mounted on the mounting surface of thepackage substrate, having a first surface which faces the mountingsurface and on which a first electrode and a second electrode aredisposed, a second surface opposed to the first surface, and sidesurfaces located between the first surface and the second surface, thefirst electrode and the second electrode being connected to the firstcircuit pattern and the second circuit pattern, respectively; awavelength conversion film disposed above the second surface of thesemiconductor LED chip, and comprising a ceramic film formed of asintered body of a ceramic phosphor, the ceramic phosphor being a firstwavelength conversion material converting a portion of light emittedfrom the semiconductor LED chip to light having a first wavelength; anda side surface inclined portion disposed at the side surfaces of thesemiconductor LED chip, providing surfaces inclined inwardly toward themounting surface of the package substrate, and comprising alight-transmitting resin, wherein the light-transmitting resincomprises: a second wavelength conversion material converting a portionof light emitted from the semiconductor LED chip to light having asecond wavelength, the second wavelength being different from the firstwavelength; and a light dispersing material to allow scattering of lightentering the side surface inclined portion from the semiconductor LEDchip, wherein an upper surface of the wavelength conversion film isprovided as an outermost light emitting plane of the semiconductorlight-emitting device, and wherein the wavelength conversion film doesnot include the second wavelength conversion material, and the sidesurface inclined portion does not include the first wavelengthconversion material.
 2. The semiconductor light-emitting device of claim1, further comprising a light-transmitting adhesive layer disposedbetween the wavelength conversion film and the semiconductor LED chip.3. The semiconductor light-emitting device of claim 2, wherein thelight-transmitting adhesive layer comprises a same light-transmittingresin as the light-transmitting resin of the side surface inclinedportion.
 4. The semiconductor light-emitting device of claim 3, whereinthe light-transmitting adhesive layer comprises a second wavelengthconversion material different from the first wavelength conversionmaterial.
 5. The semiconductor light-emitting device of claim 1, whereinthe wavelength conversion film has an area greater than an area of thesemiconductor LED chip.
 6. The semiconductor light-emitting device ofclaim 1, further comprising a side surface reflection portion which isdisposed on the mounting surface of the package substrate to surroundthe side inclined portion and comprises the inwardly inclined surfacesby contacting the side surface inclined portion, and wherein theinwardly inclined surfaces are configured to guide light emitted fromthe semiconductor LED chip toward the wavelength conversion film.
 7. Thesemiconductor light-emitting device of claim 6, wherein the side surfacereflection portion comprises a light-transmitting resin in which areflective powder is contained.
 8. The semiconductor light-emittingdevice of claim 6, wherein the package substrate comprises a cup-shapedreflective structure disposed on the mounting face to surround the sidesurface reflection portion.
 9. The semiconductor light-emitting deviceof claim 1, further comprising an optical lens disposed on thewavelength conversion film.
 10. The semiconductor light-emitting deviceof claim 1, wherein the light-transmitting resin and the lightdispersing material have different refractive indexes.
 11. Thesemiconductor light-emitting device of claim 1, wherein thelight-transmitting resin has a refractive index selected from with arange of 1.38 to 1.8.
 12. The semiconductor light-emitting device ofclaim 4, wherein the first wavelength conversion material comprises ayellow phosphor, and the second wavelength conversion material comprisesa red phosphor or a green phosphor.
 13. The semiconductor light-emittingdevice of claim 1, wherein the light dispersing material comprises atleast one of SiO₂, TiO₂, and Al₂O₃.
 14. The semiconductor light-emittingdevice of claim 1, wherein the light dispersing material comprises atleast one of SiO₂, TiO₂, and Al₂O₃.
 15. A semiconductor light-emittingdevice comprising: a package substrate having a mounting surface onwhich a first circuit pattern and a second circuit pattern are disposed;a semiconductor light-emitting diode (LED) chip mounted on the mountingsurface of the package substrate, having a first surface which faces themounting surface and on which a first electrode and a second electrodeare disposed, a second surface opposing the first surface, and sidesurfaces located between the first surface and the second surface, thefirst electrode and the second electrode being connected to the firstcircuit pattern and the second circuit pattern, respectively; awavelength conversion film disposed above the second surface of thesemiconductor LED chip, and comprising a ceramic film formed of asintered body of a ceramic phosphor, the ceramic phosphor being a firstwavelength conversion material converting a portion of light emittedfrom the semiconductor LED chip to light having a first wavelength; alight-transmitting adhesive layer which bonds the wavelength conversionfilm and the semiconductor LED chip; a side surface inclined portiondisposed at the side surfaces of the semiconductor LED chip, providingsurfaces inclined inwardly toward the mounting surface of the packagesubstrate; and a side surface reflection portion disposed on themounting surface of the package substrate to surround the side surfaceinclined portion, wherein the light-transmitting adhesive layercomprises a light-transmitting resin containing a second wavelengthconversion material converting a portion of light emitted from thesemiconductor LED chip to light having a second wavelength, the secondwavelength being different from the first wavelength, wherein the sidesurface inclined portion comprises a light-transmitting resin comprisinga light dispersing material to allow scattering of light entering theside surface inclined portion from the semiconductor LED chip, whereinan upper surface of the wavelength conversion film is provided as anoutermost light emitting plane of the semiconductor light-emittingdevice, and wherein the wavelength conversion film does not include thesecond wavelength conversion material, and the side surface inclinedportion does not include the first wavelength conversion material. 16.The semiconductor light-emitting device of claim 15, wherein the lightdispersing material contains at least one selected from a groupconsisting of SiO₂, Al₂O₃, and TiO₂.
 17. The semiconductorlight-emitting device of claim 15, wherein the light-transmittingadhesive layer comprises a same material as the side surface inclinedportion.
 18. The semiconductor light-emitting device of claim 15,wherein the side surface reflection portion comprises alight-transmitting resin in which a reflective powder is contained, andwherein the side surface reflection portion further comprises theinwardly inclined surfaces formed by contacting the side surfaceinclined portion and configured to guide light emitted from thesemiconductor LED chip toward the wavelength conversion film.
 19. Thesemiconductor light-emitting device of claim 15, wherein the wavelengthconversion film has an area greater than an area of the semiconductorLED chip.
 20. The semiconductor light-emitting device of claim 15,wherein the light-transmitting resin and the light dispersing materialhave different refractive indexes.